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120N1 CMDZ4L7 IPP80N04 AS8650 CMDZ4L7 BA032 768KH SAC10
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  Datasheet File OCR Text:
 Semiconductor
2N3904
NPN Silicon Transistor
Descriptions
* General small signal application * Switching application
Features
* Low collector saturation voltage * Collector output capacitance * Complementary pair with 2N3906
Ordering Information
Type NO. 2N3904 Marking 2N3904 Package Code TO-92
Outline Dimensions
3.450.1 4.50.1 2.250.1
unit : mm
4.50.1
0.40.02
2.060.1
14.00.40
1.27 Typ. 2.54 Typ.
123
PIN Connections 1. Emitter 2. Base 3. Collector
1.200.1
0.38
KST-9010-000
1
2N3904
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25C
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
60 40 6 200 625 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25C
Symbol
BVCBO BVCEO BVEBO ICEX hFE VCE(sat) fT Cob td tr ts tf
Test Condition
IC=10A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCE=30V, VEB=3V VCE=1V, IC=10mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3Vdc, VBE(off)=0.5Vdc. IC=10mAdc, IB1=1mAdc VCC=3Vdc,IC=10mAdc, IB1=IB2=1mAdc
Min.
60 40 6 100 300 -
Typ. Max.
50 300 0.3 4 35 35 200 50
Unit
V V V nA V MHz pF ns ns ns ns
KST-9010-000
2
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 hFE-IC
2N3904
Fig. 3 VCE(sat)-IC
KST-9010-000
3


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